MT29F2G16ABAEAWP-AIT:E

闪存, SLC NAND, 2 Gbit, 128M x 16位, 并行口, TSOP-I, 48 引脚

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MICRON MT29F2G16ABAEAWP-AIT:E 闪存, SLC NAND, 2 Gbit, 128M x 16位, 并行口, TSOP-I, 48 引脚
制造商MICRON
制造商产品编号MT29F2G16ABAEAWP-AIT:E复制
制造商标准货期80 周
库存编号4242659
您的零件号
1,259 有货

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299 件可于下一个工作日送达(Shanghai 库存)
960 件可于 5-6 个工作日内送达(英国 库存)
数量价钱 (含税)
1+CNY233.940 (CNY264.3522)
包装规格:每个
最低: 1
多件: 1
CNY233.94 (CNY264.35 含税)
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产品信息

产品概述

  • MT29F2G16ABAEAWP-AIT:E is a NAND flash device which includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).

    • 2Gb density, 16-bit device width
    • 3.3V (2.7 to 3.6V) operating voltage
    • Feature set E, Async interface
    • Single-level cell (SLC) technology, command set: ONFI NAND flash protocol
    • Operation completion, pass/fail condition, write-protect status
    • Program page cache mode, read page cache mode, one-time programmable (OTP) mode
    • Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion
    • WP# signal: write protect entire device
    • Automotive industrial temperature from -40°C to +85°C
    • Package style is 48-pin TSOP

技术规格

  • 闪存类型

    SLC NAND

    记忆配置

    128M x 16位

    IC 外壳 / 封装

    TSOP-I

    时钟频率最大值

    50MHz

    电源电压最小值

    2.7V

    额定电源电压

    3.3V

    工作温度最小值

    -40°C

    产品范围

    2.7V-3.6V SLC NAND Flash Memories

    存储密度

    2Gbit

    接口

    并行口

    针脚数

    48引脚

    存取时间

    16ns

    电源电压最大值

    3.6V

    芯片安装

    表面安装

    工作温度最高值

    85°C

技术文档 1

法律与环境

  • 原产地:
    进行最后一道重要生产流程所在的地区原产地:
    Singapore
    进行最后一道重要生产流程所在的地区
    税则号:85423275
    US ECCN:3A991.b.1.a
    EU ECCN:NLR
    RoHS 合规:

    RoHS

    RoHS 邻苯二甲酸盐合规:

    RoHS

    下载产品合规证书

    产品合规证书

    重量(千克):.000001