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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY158.370 (CNY178.9581) |
| 10+ | CNY126.470 (CNY142.9111) |
| 25+ | CNY118.470 (CNY133.8711) |
| 50+ | CNY114.130 (CNY128.9669) |
| 100+ | CNY109.790 (CNY124.0627) |
Product Information
Product Overview
The LF356H/NOPB is a first monolithic JFET input Operational Amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356 amplifier is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
- Replace expensive hybrid and module FET op-amps
- Rugged JFETs allow blow-out free handling compared with MOSFET input devices
- Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
- New output stage allows use of large capacitive loads (5000pF) without stability problems
- Internal compensation and large differential input voltage capability
- Military rated
- Green product and no Sb/Br
Applications
Industrial
Warnings
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Technical Specifications
1Channels
12V/µs
TO-99
FET / JFET Input
3mV
Through Hole
70°C
-
No SVHC (27-Jun-2018)
-
1 Amplifier
5MHz
10V to 36V
8Pins
-
30pA
0°C
-
MSL 1 - Unlimited
TO-99
5MHz
12V/µs
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
