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CSD88539ND
Dual MOSFET, N Channel, 60 V, 60 V, 15 A, 15 A, 0.023 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD88539NDCopy
Order Code
Re-Reel3125083RL
Cut Tape3125083
Your Part Number
310 In Stock
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150 Next business day delivery available(Shanghai stock)
160 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY11.510 | CNY11.51 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.510 (CNY13.0063) |
| 10+ | CNY7.280 (CNY8.2264) |
| 100+ | CNY4.860 (CNY5.4918) |
| 500+ | CNY3.050 (CNY3.4465) |
| 1000+ | CNY2.500 (CNY2.825) |
| 5000+ | CNY2.450 (CNY2.7685) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD88539NDCopy
Order Code
Re-Reel3125083RL
Cut Tape3125083
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel15A
Continuous Drain Current Id P Channel15A
Drain Source On State Resistance N Channel0.023ohm
Drain Source On State Resistance P Channel0.023ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The CSD88539ND is a NexFET™ dual N-channel Power MOSFET designed to serve as a half bridge in low current motor control applications.
- Ultra-low Qg and Qgd
- Avalanche rated
- Halogen-free
Applications
Industrial, Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
15A
Drain Source On State Resistance P Channel
0.023ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
15A
Drain Source On State Resistance N Channel
0.023ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726