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NTHD3100CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTHD3100CT1G
Order Code
Re-Reel2845402RL
Cut Tape2845402
Your Part Number
1,176 In Stock
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1176 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY7.420 | CNY37.10 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY7.420 (CNY8.3846) |
| 50+ | CNY6.180 (CNY6.9834) |
| 100+ | CNY4.940 (CNY5.5822) |
| 500+ | CNY3.610 (CNY4.0793) |
| 1500+ | CNY3.540 (CNY4.0002) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHD3100CT1G
Order Code
Re-Reel2845402RL
Cut Tape2845402
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Drain Source On State Resistance N Channel0.064ohm
Drain Source On State Resistance P Channel0.064ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTHD3100CT1G is a N/P-channel Complementary MOSFET ideal for portable battery powered products. The device is designed for DC-to DC conversion circuits, load switch applications requiring level shift and drive small brushless DC motor applications.
- Small size
- 40% Smaller then TSOP-6 package
- Trench P-channel for low ON-resistance
- Low gate charge N-channel for test switching
Applications
Industrial, Power Management, Portable Devices, Motor Drive & Control
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
3.9A
Drain Source On State Resistance P Channel
0.064ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
3.9A
Drain Source On State Resistance N Channel
0.064ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001