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FDD8880
Power MOSFET, N Channel, 30 V, 58 A, 9000 µohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDD8880
Order Code
Re-Reel2453402RL
Cut Tape2453402
Your Part Number
800 In Stock
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800 Next business day delivery available(Shanghai stock)
Available until stock is exhausted
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.120 | CNY30.60 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.120 (CNY6.9156) |
| 50+ | CNY5.090 (CNY5.7517) |
| 100+ | CNY4.060 (CNY4.5878) |
| 500+ | CNY2.540 (CNY2.8702) |
| 1000+ | CNY2.310 (CNY2.6103) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8880
Order Code
Re-Reel2453402RL
Cut Tape2453402
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id58A
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Alternatives for FDD8880
1 Product Found
Product Overview
The FDD8880 is a N-channel MOSFET produced using proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
58A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00068