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FDB2710
Power MOSFET, N Channel, 250 V, 50 A, 0.0425 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDB2710Copy
Manufacturer Standard Lead Time28 weeks
Order Code
Re-Reel2453390RL
Cut Tape2453390
Your Part Number
257 In Stock
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257 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY54.290 | CNY54.29 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY54.290 (CNY61.3477) |
| 10+ | CNY35.580 (CNY40.2054) |
| 100+ | CNY26.230 (CNY29.6399) |
| 500+ | CNY20.640 (CNY23.3232) |
| 1000+ | CNY20.230 (CNY22.8599) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB2710Copy
Manufacturer Standard Lead Time28 weeks
Order Code
Re-Reel2453390RL
Cut Tape2453390
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0425ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation260W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FDB2710 is a N-channel MOSFET produced using PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
260W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.0425ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001312