Reduced PriceOffersContact UsHelpTrack Orders
Register
0
0 ItemsCNY0.00

60A Wide-Band Gap Devices :

20 Products Found
Find a huge range of 60A Wide-Band Gap Devices at element14 China. We stock a wide range of Wide-Band Gap Devices, such as 30A, 31A, 40A & 60A Wide-Band Gap Devices from the worlds top manufacturers including: Stmicroelectronics, Infineon, Onsemi, Toshiba & Diotec

All Filters

(1 Applied)

Expand Filters

Silicon Carbide (SiC) MOSFETs & Modules (19)
Gallium Nitride (GaN) FETs (1)
Compare
Manufacturer Part No
Order Code
Manufacturer / Description
Availability
Price For
Price (inc GST)
Quantity
Continuous Drain Current Id
Drain Source Voltage Vds
NVHL040N120SC1
ONSEMI NVHL040N120SC1
3464026

Data Sheet

RoHS

ONSEMI
  1. Silicon Carbide MOSFET
  2. EliteSiC
  3. Single
  4. N Channel
  5. 60 A
  6. 1.2 kV
  7. 0.056 ohm
  8. TO-247
Each
1+ CNY209.760(CNY237.0288)
5+ CNY184.860(CNY208.8918)
10+ CNY159.960(CNY180.7548)
50+ CNY151.780(CNY171.5114)
100+ CNY143.600(CNY162.268)
More Pricing...
60A
1.2kV
NTHL040N120SC1
ONSEMI NTHL040N120SC1
3464007

Data Sheet

RoHS

ONSEMI
  1. Silicon Carbide MOSFET
  2. EliteSiC
  3. Single
  4. N Channel
  5. 60 A
  6. 1.2 kV
  7. 0.039 ohm
  8. TO-247
Each
1+ CNY148.080(CNY167.3304)
5+ CNY130.570(CNY147.5441)
10+ CNY113.060(CNY127.7578)
50+ CNY111.770(CNY126.3001)
100+ CNY110.470(CNY124.8311)
More Pricing...
60A
1.2kV
NTBG040N120SC1
ONSEMI NTBG040N120SC1
3463999

Data Sheet

RoHS

ONSEMI
  1. Silicon Carbide MOSFET
  2. EliteSiC
  3. Single
  4. N Channel
  5. 60 A
  6. 1.2 kV
  7. 0.04 ohm
  8. TO-263HV (D2PAK)
Each (Supplied on Cut Tape)
Cut Tape
1+ CNY145.950(CNY164.9235)
10+ CNY117.400(CNY132.662)
50+ CNY116.990(CNY132.1987)
100+ CNY116.570(CNY131.7241)
250+ CNY114.240(CNY129.0912)
60A
1.2kV
SCTWA60N120G2-4
STMICROELECTRONICS SCTWA60N120G2-4
3775644

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.035 ohm
  7. HiP247
Each
1+ CNY242.230(CNY273.7199)
5+ CNY218.010(CNY246.3513)
10+ CNY205.090(CNY231.7517)
50+ CNY190.550(CNY215.3215)
100+ CNY177.630(CNY200.7219)
60A
1.2kV
SCTW60N120G2
STMICROELECTRONICS SCTW60N120G2
3879171

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.035 ohm
  7. HiP247
Each
1+ CNY133.400(CNY150.742)
5+ CNY128.740(CNY145.4762)
10+ CNY124.070(CNY140.1991)
50+ CNY119.410(CNY134.9333)
100+ CNY114.740(CNY129.6562)
More Pricing...
60A
1.2kV
NTBG040N120SC1
ONSEMI NTBG040N120SC1
3463999RL

Data Sheet

RoHS

ONSEMI
  1. Silicon Carbide MOSFET
  2. EliteSiC
  3. Single
  4. N Channel
  5. 60 A
  6. 1.2 kV
  7. 0.04 ohm
  8. TO-263HV (D2PAK)
Each (Supplied on Cut Tape)
Re-Reel
10+ CNY117.400(CNY132.662)
50+ CNY116.990(CNY132.1987)
100+ CNY116.570(CNY131.7241)
250+ CNY114.240(CNY129.0912)
60A
1.2kV
SCTH60N120G2-7
STMICROELECTRONICS SCTH60N120G2-7
3806244

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.035 ohm
  7. H2PAK
Each (Supplied on Cut Tape)
Cut Tape
1+ CNY133.690(CNY151.0697)
5+ CNY128.280(CNY144.9564)
10+ CNY122.740(CNY138.6962)
50+ CNY117.050(CNY132.2665)
100+ CNY111.190(CNY125.6447)
60A
1.2kV
IMZA75R027M1HXKSA1
INFINEON IMZA75R027M1HXKSA1
4377088

Data Sheet

RoHS

INFINEON
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 750 V
  6. 0.025 ohm
  7. TO-247
Each
1+ CNY141.280(CNY159.6464)
5+ CNY124.450(CNY140.6285)
10+ CNY107.620(CNY121.6106)
50+ CNY98.630(CNY111.4519)
100+ CNY89.630(CNY101.2819)
More Pricing...
60A
750V
TW030N120C,S1F(S
TOSHIBA TW030N120C,S1F(S
4049758

Data Sheet

RoHS

TOSHIBA
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.04 ohm
  7. TO-247
Each
1+ CNY364.300(CNY411.659)
5+ CNY329.770(CNY372.6401)
10+ CNY293.810(CNY332.0053)
50+ CNY282.370(CNY319.0781)
100+ CNY270.320(CNY305.4616)
60A
1.2kV
GAN3R2-100CBEAZ
NEXPERIA GAN3R2-100CBEAZ
4198483

Data Sheet

RoHS

NEXPERIA
  1. Gallium Nitride (GaN) Transistor
  2. 100 V
  3. 60 A
  4. 2400 µohm
  5. 9.2 nC
  6. WLCSP
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+ CNY46.070(CNY52.0591)
10+ CNY30.460(CNY34.4198)
100+ CNY21.660(CNY24.4758)
500+ CNY19.390(CNY21.9107)
1000+ CNY19.010(CNY21.4813)
60A
100V
TW030Z120C,S1F(S
TOSHIBA TW030Z120C,S1F(S
4247122

Data Sheet

RoHS

TOSHIBA
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.03 ohm
  7. TO-247
Each
1+ CNY298.600(CNY337.418)
5+ CNY255.630(CNY288.8619)
10+ CNY212.650(CNY240.2945)
50+ CNY208.400(CNY235.492)
100+ CNY204.150(CNY230.6895)
60A
1.2kV
SCT027H65G3AG
STMICROELECTRONICS SCT027H65G3AG
4555392

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 650 V
  6. 0.0393 ohm
  7. H2PAK
Each (Supplied on Cut Tape)
Cut Tape
1+ CNY134.700(CNY152.211)
10+ CNY94.030(CNY106.2539)
50+ CNY89.630(CNY101.2819)
200+ CNY85.240(CNY96.3212)
500+ CNY80.830(CNY91.3379)
60A
650V
F413MXTR12C1M2H11BPSA1
INFINEON F413MXTR12C1M2H11BPSA1
4759602

Data Sheet

RoHS

INFINEON
  1. Silicon Carbide MOSFET
  2. FourPack
  3. Quad N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.0125 ohm
  7. Module
Each
1+ CNY991.280(CNY1,120.1464)
5+ CNY893.240(CNY1,009.3612)
10+ CNY795.200(CNY898.576)
60A
1.2kV
SCT018HU65G3AG
STMICROELECTRONICS SCT018HU65G3AG
4740489

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 650 V
  6. 0.029 ohm
  7. HU3PAK
Each (Supplied on Cut Tape)
Cut Tape
1+ CNY120.950(CNY136.6735)
5+ CNY109.540(CNY123.7802)
10+ CNY97.780(CNY110.4914)
50+ CNY93.310(CNY105.4403)
100+ CNY92.600(CNY104.638)
More Pricing...
60A
650V
F413MXTR12C1M2QH11BPSA1
INFINEON F413MXTR12C1M2QH11BPSA1
4759605

Data Sheet

RoHS

INFINEON
  1. Silicon Carbide MOSFET
  2. FourPack
  3. Quad N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.0125 ohm
  7. Module
Each
1+ CNY964.040(CNY1,089.3652)
5+ CNY905.910(CNY1,023.6783)
10+ CNY847.780(CNY957.9914)
60A
1.2kV
DIW065SIC049
DIOTEC DIW065SIC049
4680846

Data Sheet

RoHS

DIOTEC
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 650 V
  6. 0.049 ohm
  7. TO-247
Each
1+ CNY111.460(CNY125.9498)
5+ CNY90.870(CNY102.6831)
10+ CNY70.280(CNY79.4164)
50+ CNY65.410(CNY73.9133)
100+ CNY60.530(CNY68.3989)
More Pricing...
60A
650V
SCT027W65G3-4AG
STMICROELECTRONICS SCT027W65G3-4AG
4458501

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 650 V
  6. 0.0393 ohm
  7. HiP247
Each
1+ CNY126.080(CNY142.4704)
5+ CNY111.160(CNY125.6108)
10+ CNY96.240(CNY108.7512)
50+ CNY90.720(CNY102.5136)
100+ CNY85.200(CNY96.276)
More Pricing...
60A
650V
AIMZA75R027M1HXKSA1
INFINEON AIMZA75R027M1HXKSA1
4377078

Data Sheet

RoHS

INFINEON
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 750 V
  6. 0.025 ohm
  7. TO-247
Each
1+ CNY148.850(CNY168.2005)
5+ CNY131.110(CNY148.1543)
10+ CNY113.360(CNY128.0968)
50+ CNY103.890(CNY117.3957)
100+ CNY94.420(CNY106.6946)
More Pricing...
60A
750V
SCT027TO65G3
STMICROELECTRONICS SCT027TO65G3
4753400

Data Sheet

RoHS

STMICROELECTRONICS
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 650 V
  6. 0.0393 ohm
  7. TOLL
Each (Supplied on Cut Tape)
Cut Tape
1+ CNY115.470(CNY130.4811)
5+ CNY96.700(CNY109.271)
10+ CNY77.910(CNY88.0383)
50+ CNY73.730(CNY83.3149)
100+ CNY69.520(CNY78.5576)
More Pricing...
60A
650V
C2M0040120D
WOLFSPEED C2M0040120D
2630829

Data Sheet

RoHS

WOLFSPEED
  1. Silicon Carbide MOSFET
  2. Single
  3. N Channel
  4. 60 A
  5. 1.2 kV
  6. 0.04 ohm
  7. TO-247
Each
1+ CNY424.450(CNY479.6285)
5+ CNY358.370(CNY404.9581)
10+ CNY292.280(CNY330.2764)
50+ CNY292.200(CNY330.186)
60A
1.2kV
1-20 of 20 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Bipolar transistors
DIOTEC
Bipolar transistors
DIOTEC
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
600V Gallium Nitride (GaN) Transistor
INFINEON
600V Gallium Nitride (GaN) Transistor
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI ANAB
Mark of trust multi scheme-9001 14001 45001
electronical-license
Anti Fraud Call
We Chat
Ali Pay
Union Pay
Trade Account
cash on delivery
money transfer