Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price (inc GST)	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max

ADP46075W3	4528432 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET AQG 324 SixPack N Channel 485 A 750 V 2050 µohm ACEPACK DRIVE	Each	1+ CNY6,747.100(CNY7,624.223)	SixPack	N Channel	485A	750V	2050µohm	ACEPACK DRIVE	30Pins	18V	4.4V	704W	175°C
ADP480120W3-L	4558118 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET SixPack N Channel 488 A 1.2 kV 2600 µohm ACEPACK DRIVE	Each	1+ CNY11,724.240(CNY13,248.3912)	SixPack	N Channel	488A	1.2kV	2600µohm	ACEPACK DRIVE	30Pins	18V	4.4V	869W	175°C
ADP480120W3	4558119 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET SixPack N Channel 488 A 1.2 kV 2600 µohm ACEPACK DRIVE	Each	1+ CNY10,876.050(CNY12,289.9365)	SixPack	N Channel	488A	1.2kV	2600µohm	ACEPACK DRIVE	30Pins	18V	4.4V	869W	175°C
ADP280120W3	4558117 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET SixPack N Channel 275 A 1.2 kV 5050 µohm ACEPACK DRIVE	Each	1+ CNY8,797.000(CNY9,940.610)	SixPack	N Channel	275A	1.2kV	5050µohm	ACEPACK DRIVE	30Pins	18V	4.4V	549W	175°C

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