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Drain Source On State Resistance
=620µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (inc GST) | Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Cut Tape | 1+ CNY33.820(CNY38.2166) 10+ CNY22.320(CNY25.2216) 100+ CNY15.700(CNY17.741) 500+ CNY13.340(CNY15.0742) 1000+ CNY13.080(CNY14.7804) | N Channel | 30V | 100A | 620µohm | PowerPAK SO | Surface Mount | 10V | 2.2V | 125W | 8Pins | 150°C | TrenchFET Gen IV | - | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+ CNY18.290(CNY20.6677) 10+ CNY11.590(CNY13.0967) 100+ CNY7.860(CNY8.8818) 500+ CNY6.050(CNY6.8365) 1000+ CNY5.040(CNY5.6952) More Pricing... | N Channel | 30V | 337A | 620µohm | SOIC | Surface Mount | 10V | 2.2V | 150W | 8Pins | 175°C | - | - | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+ CNY58.200(CNY65.766) 10+ CNY38.820(CNY43.8666) 100+ CNY27.810(CNY31.4253) 500+ CNY25.200(CNY28.476) 1000+ CNY24.700(CNY27.911) | N Channel | 40V | 425A | 620µohm | LFPAK88 | Surface Mount | 10V | 3V | 375W | 4Pins | 175°C | - | AEC-Q101 | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+ CNY30.460(CNY34.4198) 10+ CNY20.020(CNY22.6226) 100+ CNY14.080(CNY15.9104) 500+ CNY11.540(CNY13.0402) 1000+ CNY10.730(CNY12.1249) More Pricing... | N Channel | 30V | 100A | 620µohm | PowerPAK SO | Surface Mount | 10V | 2.2V | 125W | 8Pins | 150°C | TrenchFET Gen IV | - | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+ CNY23.160(CNY26.1708) 10+ CNY14.940(CNY16.8822) 100+ CNY10.290(CNY11.6277) 500+ CNY8.390(CNY9.4807) 1000+ CNY7.310(CNY8.2603) More Pricing... | N Channel | 30V | 100A | 620µohm | PowerPAK SO | Surface Mount | 10V | 2.2V | 104W | 8Pins | 150°C | TrenchFET Gen IV | - | ||||||
